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Authors: Z. Ouyang, E.M.B. Fahmy, A. Yimam, B.Kunert, D. Van Thourhout
Title: Low-optical-pumping-threshold InGaAs/GaAs Nano-ridge Laser Monolithically Grown on 300 mm Silicon Substrate
Format: International Conference Presentation
Publication date: 5/2023
Journal/Conference/Book: Conference on Lasers and Electro-Optics
Volume(Issue): p.paper STh3H.3 (2 pages)
Location: San Jose, United States
Citations: Look up on Google Scholar
Download: Download this Publication (398KB) (398KB)


Amorphous-silicon-grating-on-top DFB-InGaAs/GaAs-laser directly grown on silicon substrate by nano-ridge engineering technique exhibits 2.5 kW/cm2 lasing threshold, 10 times smaller than nano-ridge laser with etched grating, due to avoiding introducing carrier loss path at GaAs-air surface.

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