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Authors: S. Poelman, M. Billet, A. Hermans, N. Fiuczek, H. Turski, B. Kuyken
Title: Transfer Printing of InGaN/GaN Quantum-Well based Light Emitting Diodes
Format: International Conference Proceedings
Publication date: 5/2023
Journal/Conference/Book: Conference on Lasers and Electro-Optics
Volume(Issue): (2023)
Location: San Jose, United States
DOI: 10.1364/CLEO_AT.2023.ATu3H.5
Citations: Look up on Google Scholar
Download: Download this Publication (1.9MB) (1.9MB)


We demonstrate the transfer printing of an InGaN/GaN-QW based LED on a
silicon substrate, emitting around 470 nm. This result is the first step toward heterogeneous
integration of GaN-based devices on CMOS-compatible SiN photonic circuits.

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