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Authors: E. Soltanian, G. Muliuk, S. Uvin, D. Wang, G. Lepage, P. Verheyen, J. Van Campenhout, S. Ertl, J. Rimbock, N. Vaissiere, D. Neel, J. Ramirez, J. Decobert, B. Kuyken, J. Zhang, G. Roelkens
Title: Narrow-Linewidth Micro-Transfer-Printed III-V-on-Si Laser with 110 nm Tuning Range
Format: International Conference Proceedings
Publication date: 7/2022
Journal/Conference/Book: 2022 IEEE Photonics Society Summer Topicals Meeting Series (SUM) (invited)
Editor/Publisher: IEEE, 
Volume(Issue): p.paper TuG2.1-1 (2 pages)
Location: Cabo San Lucas, Mexico
DOI: 10.1109/SUM53465.2022.9858218
Citations: Look up on Google Scholar


On-chip laser sources covering a wide wavelength range is one of the key enablers to coherent optical communication systems. In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si laser with 110 nm tuning range realized using micro-transfer printing technology.

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