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Authors: J. Zhang, L. Bogaert, B. Haq, R. Wang, B. Matuskova, J. Rimbock, S. Ertl, A. Gocalinska, E. Pelucchi, B. Corbett, J. Van Campenhout, G. Lepage, P. Verheyen, G. Morthier, G. Roelkens
Title: III-V-on-Si DFB laser with co-integrated booster realised using micro-transfer printing
Format: International Journal
Publication date: 9/2022
Journal/Conference/Book: IEEE Photonics Technology Letters
Volume(Issue): 35(11) p.593 - 596
DOI: 10.1109/LPT.2023.3263279
Citations: 2 ( - last update: 26/5/2024)
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A C-band III-V-on-Si distributed feedback (DFB) laser with co-integrated power amplifier was realized using micro-transfer printing. The DFB laser exhibits single mode operation around 1540 nm at 20 °C. By driving the DFB laser and co-integrated power amplifier simultaneously, up to 14 dBm waveguide-coupled output power with over 28 dB side mode suppression ratio was achieved at an overall bias current of 270 mA.

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