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Authors: J. Goyvaerts, S. Kumari, S. Uvin, J. Zhang, R. Baets, A. Gocalinska, E. Pelucchi, B. Corbett, G. Roelkens
Title: Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride photonic integrated circuits
Format: International Conference Presentation
Publication date: 10/2020
Journal/Conference/Book: Annual Conference of the IEEE Photonics Society
Editor/Publisher: IEEE, 
Volume(Issue): p.1-2
Location: Vancouver, Canada
DOI: 10.1109/IPC47351.2020.9252495
Citations: Look up on Google Scholar
Download: Download this Publication (489KB) (489KB)


We demonstrate the integration of GaAs p-i-n photodiodes onto silicon nitride grating couplers by means of transfer-printing. Dark current below 20 pA and waveguide-coupled responsivities of 0.30 A/W are obtained. The detectors are integrated with an on-chip near-infrared spectrometer.

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