|M. Shahin, J. Van Kerrebrouck, G. Roelkens, G. Morthier
|InP-on-Si DFB Laser Diode with Distributed Reflector for Improved Power Efficiency
|International Conference Poster
|European Conference on Integrated Optics (ECIO 2019)
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A heterogeneously integrated InP-on-Si DFB laser diode with an active distributed reflector is demonstrated. The goal is to improve the power efficiency of the laser, by reducing the threshold current, and obtaining similar 3-dB modulation bandwidth with similar optical output power levels to previously demonstrated lasers, at lower injected current values. The device was first fabricated as a standard single-section DFB laser, then electrically isolated in two sections with unequal lengths. The shorter section is pumped and acts as an active laser section, while the other section is not pumped and acts as an absorbing distributed reflector. The threshold current was reduced from 17 mA to 9 mA, and the bias current required to achieve similar 3-dB modulation bandwidth to previously demonstrated lasers was reduced from 100 mA to 45 mA. Transmission of a 28 Gbps NRZ-OOK signal for both a back-to-back configuration and over 2 km of NZ-DS fiber is demonstrated, with bit-error-rate below the hard-decision forward-error-correction threshold.
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