Authors: | A. Srinivasan, C. Porret, E. Vissers, P. Geiregat, D. Van Thourhout, R. Loo, M. Pantouvaki, J. Van Campenhout | Title: | High-contrast quantum-confined Stark effect in Ge/SiGe quantum well stacks on Si with ultra-thin buffer layers | Format: | International Conference Proceedings | Publication date: | 8/2018 | Journal/Conference/Book: | Conference on Lasers and Electro-Optics Pacific Rim
| Editor/Publisher: | OSA, | Volume(Issue): | p.Th3C.1 | Location: | Hong Kong, China | DOI: | 10.1364/CLEOPR.2018.Th3C.1 | Citations: | 3 (Dimensions.ai - last update: 8/12/2024) 2 (OpenCitations - last update: 19/4/2024) Look up on Google Scholar
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Abstract
Quantum-confined Stark effect with a record absorption contrast of 2.5 for 1V swing is demonstrated in Ge/GeSi quantum well stacks grown on Si using ultra-thin buffer layers, targeting future integration in a silicon photonics platform. Related Research Topics
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