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Authors: N. Ye, G. Muliuk, J. Zhang, S. Uvin, D. Van Thourhout, G. Roelkens, A. J. Trindade, C. Bower
Title: High-Alignment-Accuracy Transfer Printing of Passive Silicon Waveguide Structures
Format: International Journal
Publication date: 1/2018
Journal/Conference/Book: Optics Express
Volume(Issue): 26(2) p.2023-2032
DOI: 10.1364/oe.26.002023
Citations: 8 ( - last update: 9/6/2024)
2 (OpenCitations - last update: 19/4/2024)
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We demonstrate the transfer printing of passive silicon devices on a silicon-on-insulator target waveguide wafer. Adiabatic taper structures and directional coupler structures were designed for 1310 nm and 1600 nm wavelength coupling tolerant for 1 μm misalignment. The release of silicon devices from the silicon substrate was realized by underetching the buried oxide layer while protecting the back-end stack. Devices were successfully picked by a PDMS stamp, by breaking the tethers that kept the silicon coupons in place on the source substrate, and printed with high alignment accuracy on a silicon photonic target wafer. Coupling losses of -1.5 dB for the adiabatic taper at 1310 nm wavelength and -0.5 dB for the directional coupler at 1600 nm wavelength are obtained.

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