Photonics Research Group Home
Ghent University Journals/Proceedings
About People Research Publications Education Services
 IMEC
intern

 

Publication detail

Authors: J. Zhang, Y. Li, S. Dhoore, G. Morthier, G. Roelkens
Title: Unidirectional, widely-tunable and narrow-linewidth heterogeneously integrated III-V-on-silicon laser
Format: International Journal
Publication date: 3/2017
Journal/Conference/Book: Optics Express
Volume(Issue): 25(6) p.7092-7100
Location: United States
DOI: 10.1364/OE.25.007092
Citations: 21 (Dimensions.ai - last update: 8/12/2024)
16 (OpenCitations - last update: 27/6/2024)
Look up on Google Scholar
Download: Download this Publication (2.8MB) (2.8MB)

Abstract

A heterogeneously integrated widely tunable III-V-on-silicon ring laser with
unidirectional operation is demonstrated. 40 nm tuning range (from 1560 nm to 1600 nm) is
obtained using the Vernier effect between two ring resonators incorporated in the ring laser
cavity. Unidirectional operation is obtained by integrating a DBR reflector coupling the
clockwise and counterclockwise mode of the ring laser cavity. Unidirectional operation is
obtained over the entire tuning range with about 10 dB suppression of the clockwise mode.
The laser linewidth is lower than 1 MHz over the entire tuning range, down to 550 kHz in the
optimum operation point. The waveguide-coupled output power is above 0 dBm over the
entire tuning range.

Related Research Topics

Related Projects

Citations (OpenCitations)

Back to publication list