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Authors: Yosuke Shimura, A. Srinivasan, D. Van Thourhout, R. Van Deun, M. Pantouvaki, J. Van Campenhout, R. Loo
Title: Enhanced active P doping using high order Ge precursors leading to intense photoluminescence
Format: International Journal
Publication date: 8/2015
Journal/Conference/Book: Thin Solid Films
Editor/Publisher: Elsevier, 
DOI: 10.1016/j.tsf.2015.07.071
Citations: 21 ( - last update: 9/6/2024)
15 (OpenCitations - last update: 19/4/2024)
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The impact of the growth temperature on the in-situ Phosphorous doped Ge layer grown by chemical vapor deposition is studied to achieve a sufficiently high n-type carrier concentration for the realization of the quasi-direct band gap material in Ge. The use of a high order precursor gas, namely Ge2H6, allows to reduce the growth temperature down to 320C without degrading the material quality in view of optical applications. An active phosphorous concentration as high as 6.2e19 /cm3 has been measured by Hall effect measurements. The achieved active phosphorous concentration is the highest among the reported concentrations for uniformly in-situ doped Ge layers. The high and almost fully (87%) activated phosphorous concentration results in a strong photoluminescence peak at room temperature, which intensity is 8.3 times higher compared to the photoluminescence intensity as measured for an undoped Ge layer.

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