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Authors: G. Roelkens, U.D. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E.M.P. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. shen, N. Healy, A. Peacock, X. Liu, R. Osgood, W.M.J. Green
Title: long-wavelength silicon photonic integrated circuits
Format: International Conference Proceedings
Publication date: 8/2014
Journal/Conference/Book: 11th International Conference on Group IV Photonics (GFP) (invited)
Volume(Issue): p.23-24
Location: Paris, France
DOI: 10.1109/Group4.2014.6962009
Citations: Look up on Google Scholar
Download: Download this Publication (706KB) (706KB)


In this paper we elaborate on our development of
silicon photonic integrated circuits operating at wavelengths beyond the telecommunication wavelength window. Silicon-oN-insulator waveguide circuits up to 3.8 μm wavelength are demonstrated as well as germanium-on-silicon waveguide circuits operating in the 5-5 μm wavelength range. The heterogeneous integration of III-V semiconductors and IV-VI semiconductors on this platform is described for the integration of lasers and photodetectors operating in the 2-3 μm wavelength range. GeSn is proposed as an appealing approach to monolithically integrated long-wavelength detectors. Finally, nonlinear optics in silicon waveguide circuits beyond the two-photon absorption threshold is explored.

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