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Authors: Z. Wang, B. Tian, Mohan Paladugu, M. Pantouvaki, Clement Merckling, Weiming Guo, Johan Dekoster, Matty Caymax, J. Van Campenhout, Philippe Absil, D. Van Thourhout
Title: An Ultra-Short InP Nanowire Laser Monolithic Integrated on (001) Silicon Substrate_final
Format: International Conference Presentation
Publication date: 7/2013
Journal/Conference/Book: IEEE summer topicals 2013
Volume(Issue): p.23-24
Location: Waikoloa Hawaii, United States
DOI: 10.1109/phosst.2013.6614448
Citations: 2 ( - last update: 21/7/2024)
1 (OpenCitations - last update: 19/4/2024)
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Silicon photonics holds the promise of converging electronics and photonics. The key component, a lowcost high-performance laser, is still missing however within this platform. Although novel solutions have
been proposed to increase the light emission directly from silicon (or Ge), compared with their III-V
counterparts [1-2], these solutions are still in their infancy. Recently, the epitaxial growth of III-Vs on
silicon regained a wide interest. III-V nanowire growth has been widely investigated. However, most of
the III-V nanowire lasers on silicon require a complex cleaving and transfer process, which make these
devices not suitable for dense integration [3]. In addition, the large cavity dimensions along the nanowire
axis (several microns) hinder dense integration. Here, we present the first room-temperature operation of
an ultra-short InP nanowire laser that is epitaxially grown on an exactly [001] oriented silicon substrate.
The sub-micron sized laser cavity largely enhances the interaction of the lasing mode with the gain
medium, and a large spontaneous emission factor has been obtained.

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