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Authors: H. Yu, D. Korn, M. Pautouvaki, J. Van Campenhout, K. Komorowska, P. Verheyen, G. Lepage, P. Absil, D. Hillerkuss, J. Leuthold, R. Baets, W. Bogaerts
Title: Using carrier-depletion silicon modulators for optical power monitoring
Format: International Journal
Publication date: 9/2012
Journal/Conference/Book: Optics letters
DOI: 10.1364/ol.37.004681
Citations: 37 ( - last update: 9/6/2024)
27 (OpenCitations - last update: 10/5/2024)
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Defect mediated sub-bandgap absorption is observed in ion-implanted silicon-on-oxide waveguides which experience a rapid thermal annealing at 1075 ÂșC. With this effect, general carrier-depletion silicon modulators exhibit the capability for optical power monitoring. Responsivity is measured to be 22 mA/W at -7.1 V bias voltage for a 3 mm long Mach-Zehnder modulator of 2?018 cm-3 doping concentration, and 5.9 mA/W at -10 V bias voltage for a ring modulator of 1?018 cm-3 doping concentration. The latter is used to demonstrate data detection of up to 35 Gbit/s. ?2012 Optical Society of America

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