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Authors: S. Selvaraja, Luis Fernandez, M. Vanslembrouck, Jean-Luc Everaert, P. Dumon, J. Van Campenhout, W. Bogaerts, Philippe Absil
Title: Si photonic device uniformity improvement using wafer-scale location specific processing
Format: International Conference Proceedings
Publication date: 9/2012
Journal/Conference/Book: IEEE Photonics Conference 2012 (IPC)
Volume(Issue): p.725-726
Location: Burlingame, California, United States
DOI: 10.1109/ipcon.2012.6358827
Citations: 9 ( - last update: 9/6/2024)
3 (OpenCitations - last update: 10/5/2024)
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We report two-fold improvement in Si photonic device uniformity over a 200mm SOI wafer through location specific processing. A within wafer thickness non-uniformity of 0.8nm yielding a grating fiber-coupler peak-wavelength nonuniformity of 1.8nm is achieved.

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