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Authors: X. Liu, B. Kuyken, G. Roelkens, R. Baets, R. M. Osgood Jr., W. M. J. Green
Title: Bridging the Mid-Infrared-to-Telecom Gap with Silicon Nanophotonic Spectral Translation
Format: International Journal
Publication date: 9/2012
Journal/Conference/Book: Nature Photonics
Volume(Issue): p.667-671
DOI: 10.1038/nphoton.2012.221
Citations: 146 ( - last update: 23/6/2024)
88 (OpenCitations - last update: 10/5/2024)
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Expanding far beyond traditional applications in optical interconnects at telecommunications
wavelengths, the silicon nanophotonic integrated circuit platform has recently proven its merits
for working with mid-infrared (mid-IR) optical signals in the 2-8 ìm range. Silicon’s broadband
transparency, strong optical confinement, and potential for co-integration with CMOS
electronics are but a few of the many characteristics making the silicon platform ideal for
development of high-performance, densely-integrated mid-IR optical systems. These systems are
capable of addressing applications including industrial process and environmental monitoring,
threat detection, medical diagnostics, and free-space communication. Rapid progress has led to
the demonstration of various silicon components designed for the on-chip processing of mid-IR
signals, including waveguides, vertical grating couplers11, microcavities, and electrooptic
modulators. Even so, a notable obstacle to the continued advancement of chip-scale systems is
imposed by the narrow-bandgap semiconductors, such as InSb and HgCdTe, traditionally used to
convert mid-IR photons to electrical currents.

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