Authors: | F.Y. Gardes, A. Brimont, P. Sanchis, G. Rasigade, D. Marris-Morini, L. O'Faolain, F. Dong, J.M. Fedeli, P. Dumon, L. Vivien, T.F. Krauss, G.T. Reed, J. Marti | Title: | High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode | Format: | International Journal | Publication date: | 11/2009 | Journal/Conference/Book: | Optics Express
| Volume(Issue): | 17(24) p.21986-21991 | DOI: | 10.1364/OE.17.021986 | Citations: | 151 (Dimensions.ai - last update: 3/11/2024) 114 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract
High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications. Related Research Topics
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