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Authors: S. Selvaraja, D. Van Thourhout, R. Baets, E. Sleeckx, M. Schaekers
Title: Deposited silicon-on-insulator material technology for photonic integrated circuitry
Format: International Conference Presentation
Publication date: 12/2007
Journal/Conference/Book: 12th IEEE/LEOS Benelux Annual Symposium 2007
Editor/Publisher: IEEE/LEOS Benelux chapter, 
Volume(Issue): p.15-18
Location: Brussels, Belgium
Citations: Look up on Google Scholar
Download: Download this Publication (61KB) (61KB)


With ever increasing complexity and density of photonic integrated circuits the need for multilayer functionality is arising for next generation photonic circuitry. As crystalline silicon is limited to single layer circuitry deposited silicon is one of the solutions for multilayer circuitry. Therefore, we explored two types of deposition technique for silicon: Low Pressure and Plasma Enhanced CVD process. The material properties are assessed for applicability by FTIR, XRD and AFM characterization. Finally, the propagation loss is measured at 1550nm wavelength range. We measured a propagation loss of 3.5 and 13.4dB/cm for 500nm photonic wire fabricated from PECVD and LPCVD process respectively.

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